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Horizon V The continuous production line of vertical magnetron sputtering function

                                                

                 

 

 

Horizon V (In-Line Glass Systems)

The Horizon V (vertical) is a high throughput continuous substrate carrier coating system. Carriers with single or multiple substrates are staged from atmosphere to high vacuum, transitioned to a continuous controlled process line speed through the process section, and transitioned back to atmosphere in a discontinuous staged process.The Horizon V has all of the same pre-treatment, post-treatment and process capabilities as the Horizon. The chambers of the Horizon V allow processing of carriers along both the supply and return direction, reducing the needed system length and providing a single end for substrate load and unload. Carriers are transported at a 7o angle from vertical to allow use of gravity to hold most substrates in place and to orient the substrate in a sputter-up condition for improved debris management.

The Horizon V can be placed in series or in parallel with other processing tools. We can configure the system as a straight in-line tool with substrate unloading at the end and use the backside for carrier return, or we can configure it such that the load and unload are at the same end. Substrates can be manually handled into and out of the carrier, or loading can be automated. If other tools in the line use a carrier we can consider adapting the transport to use a standard size part. We can help define a total transport package that incorporates carrier management and substrate handling.

Standard Technical Specifications

  • Carrier size: 1600mm tall x 1350mm long (2x 660mm x 1250mm substrates, short side leading)
  • Load to Load Cycle Time: down to 20 sec. (Cycle Time dependent upon production requirements)
  • Process line speed available to match load to load cycle time, servo-motor controlled.
  • Drive belts external to vacuum for atmosphere maintenance.
  • High vacuum pumping with 2000 l/s series turbomolecular pumps
  • Substrate heating available to 300 o C (optional to 450 o C)
  • Carrier designed for zero (0) visible gap between carriers in process area
  • Cathode and Carrier transfer is 7 o off vertical, oriented such that the substrate leans over the cathode (sputter-up)
  • Two (2) gas selection per process section (up to four gases available)
  • Uniform gas distribution along the length of cathodes. Adjustable length trim gas sections can be supplied based on layer uniformity requirement.
  • Gas separation factor, if required, of >20:1 standard between layers using different gas mixtures.
  • Process uniformity +/- 3% (available option to +/- 1.5%)
  • Sputtering available with DC, Pulsed-DC, MF and RF
  • On-line (in-situ) transmission and/or sheet resistance available on request